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GD9FS1G6F2AMG датащи(PDF) 52 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD9FS1G6F2AMG
подробное описание детали  Single level cell technology
PDF  55 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD9FS1G6F2AMG датащи(HTML) 52 Page - GigaDevice Semiconductor (Beijing) Inc.

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52
14. Part Numbering Information
GD 9F U 1G 8 F 2 A M G I
1
2
3
4
5 6
7
8
9
10 11
1.
GD
2.
Memory Type
9F: Parallel NAND
3.
Power Supply
VCCQ
VCC
U
2.7v ~ 3.6v
2.7v ~ 3.6v
S
1.7v ~ 1.95v
1.7v ~ 1.95v
4.
Density:
12: 128Mb
25: 256Mb
51: 512Mb
1G: 1Gb
2G: 2Gb
4G: 4Gb
8G: 8Gb
AG: 16Gb
BG: 32Gb
CG: 64Gb
DG: 128Gb
EG: 256Gb
FG: 512Gb
HG: 1Tb
5.
Organization
8:
x8
6:
x16
6.
NAND Type:
F:
SLC, 1Die, 1nCE, 1Rnb
T:
TLC; 1Die, 1nCE, 1Rnb
U:
TLC; 2Die, 1nCE, 1Rnb
V:
TLC; 4Die, 1nCE, 1Rnb
7.
Function Mode:
2:
Sequential Row Read Disable;
8.
Process Generation:
A:
1st
B:
2nd
9.
Package
M: TSOPI-48
L:
FBGA-63
D:
FBGA-48
W: Wafer
10. Package Material & Packing
G:
Lead & Halogen Free
W: Wafer
11. Temperature Grade
I:
Industrial (-40C ~ 85C)
F:
Industrial+ (-40C ~ 85C)
J:
Industrial (-40C ~ 105C)
Note: (1) F: Industrial+, Full Function Test for Automotive
application and No AECQ



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