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GD9FS1G6F2AMG датащи(PDF) 35 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD9FS1G6F2AMG
подробное описание детали  Single level cell technology
PDF  55 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD9FS1G6F2AMG датащи(HTML) 35 Page - GigaDevice Semiconductor (Beijing) Inc.

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GD9Fx1GxF2A
35
96-99
M
Number of blocks per logical unit (LUN)
00H
04H
00H
00H
100
M
Number of logical units (LUNs)
01H
101
M
Number of address cycles
4-7 Column address cycles
0-3 Row address cycles
22H
102
M
Number of bits per cell
01H
103-104
M
Bad blocks maximum per LUN
14H
00H
105-106
M
Block endurance
01H
05H
107
M
Guaranteed valid blocks at beginning of target
01H
108-109
M
Block endurance for guaranteed valid blocks
01H
05H
110
M
Number of programs per page
04H
111
M
Partial programming attributes
5-7 Reserved
4 1 = partial page layout is partial page data followed by partial page spare
1-3 Reserved
0 1 = partial page programming has constraints
00H
112
M
Number of bits ECC correctability
04H
113
M
Number of interleaved address bits
4-7 Reserved (0)
0-3 Number of interleaved address bits
00H
114
O
Interleaved operation attributes
4-7 Reserved (0)
3 Address restrictions for program cache
2 1 = program cache supported
1 1 = no block address restrictions
0 Overlapped / concurrent interleaving support
00H
115-127
Reserved
00H
…
00H
Electrical parameters block
128
M
I/O capacitance
06H



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