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GD9FS1G6F2AMG датащи(PDF) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD9FS1G6F2AMG
подробное описание детали  Single level cell technology
PDF  55 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD9FS1G6F2AMG датащи(HTML) 46 Page - GigaDevice Semiconductor (Beijing) Inc.

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46
12.4 Performance Characteristics
Parameter
Symbol
Min
Typ.
Max
Unit
Data transfer from cell to register
tR
25
us
Program Time
tPROG
-
300
700
μs
Read Cache busy time
tCBSYR
5
tR
μs
Cache Program short busy time
tCBSYW
5
700
μs
Number of Partial Program Cycles in the Same Page
NOP
-
-
4
cycles
Block Erase Time
tBERS
-
3
10
ms
Device resetting time
Read
tRST
10
us
Program
20
us
Erase
500
us
Note: Typical value is measured at Vcc=3.3V, TA=25
℃(3.3V Device) or Vcc=1.8 V, TA=25℃(1.8V Device).



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