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GD9FS1G6F2AMG датащи(PDF) 22 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD9FS1G6F2AMG
подробное описание детали  Single level cell technology
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
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8.2.2 Page Program Operation with Random Data Input (85H-10H)
The device supports random data input in a page. The column address of next data, which will be entered, may be changed
to the address which follows random data input command (85H). Random data input may be operated multiple times
regardless of how many times it is done in a page.
Din
N
Din
N+1
85h
Col.
Add1
Din
J
Din
K
70h
Col.
Add2
tWHR
Status
10h
Din
J+1
Din
M
Row.
Add2
Row.
Add1
Col.
Add2
Col.
Add1
80h
IO 0 = 0, pass
IO 0 = 1, fail
tCS
tDS tCH
tADL
:Don't care
CE#
CLE
ALE
WE#
RE#
I/Ox
R/B#
tCLS
tWC
tPROG
Figure 18: Page Program Operation with Random Data Input figures
8.2.3 Page Re-program (8BH-10H)
It was also highlighted that page program may result in a fail, which can be detected by Read Status Register. In this event,
it implements the
innovative feature of “page re-program”. This command allows the re-programming of the same pattern
of the (failed) page into another memory location. The command sequence initiates with re-program setup (8BH), followed
by the four cycle address inputs of the target page. If the target pattern for the destination page is not changed compared
to the page, the program confirm can be issued (10H) without any data input cycle.
On the other hand, if the pattern bound for the target page is different from that of the previous page, data in cycles can be
issued before program confirm “10H”



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