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HIP6501ACBZ датащи(PDF) 12 Page - Renesas Technology Corp |
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HIP6501ACBZ датащи(HTML) 12 Page - Renesas Technology Corp |
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12 / 14 page ![]() HIP6501A FN4749 Rev 6.00 Page 12 of 14 December 30, 2004 Q4 If a P-Channel MOSFET is used to switch the 5VSB output of the ATX supply into the 5VDUAL output during S3 and S4/S5 states (as dictated by EN5VDL status), then, similar to the situation where Q1 is a MOSFET, the selection criteria of this device is also proper voltage budgeting. The maximum rDS(ON), however, has to be achieved with only 4.5V of VGS, so a logic level MOSFET needs to be selected. If a PNP device is chosen to perform this function, it has to have a low saturation voltage while providing the maximum sleep-state current and have a current gain sufficiently high to be saturated using the minimum drive current (typically 20mA; 4mA during soft-start). Q3, Q5 The two N-Channel MOSFETs are used to switch the 3.3V and 5V inputs provided by the ATX supply into the 3.3VDUAL and 5VDUAL outputs, respectively, while in active (S0, S1) states. Similar rDS(ON) criteria apply in these cases as well, unlike the PMOS, however, these NMOS transistors get the benefit of an increased VGS drive (approximately 8V and 7V, respectively). Q2 The NPN transistor used as sleep-state pass element on the 3.3VDUAL output must have a minimum current gain of 100 at VCE = 1.5V, and ICE = 500mA throughout the in-circuit operating temperature range. |
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