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HIP6501ACBZ датащи(PDF) 12 Page - Renesas Technology Corp

номер детали HIP6501ACBZ
подробное описание детали  Triple Linear Power Controller with ACPI Control Interface
PDF  14 Pages
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производитель  RENESAS [Renesas Technology Corp]
домашняя страница  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

HIP6501ACBZ датащи(HTML) 12 Page - Renesas Technology Corp

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HIP6501A
FN4749 Rev 6.00
Page 12 of 14
December 30, 2004
Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5VDUAL output during S3 and
S4/S5 states (as dictated by EN5VDL status), then, similar to
the situation where Q1 is a MOSFET, the selection criteria of
this device is also proper voltage budgeting. The maximum
rDS(ON), however, has to be achieved with only 4.5V of VGS,
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep-state
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA;
4mA during soft-start).
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in
active (S0, S1) states. Similar rDS(ON) criteria apply in these
cases as well, unlike the PMOS, however, these NMOS
transistors get the benefit of an increased VGS drive
(approximately 8V and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3VDUAL output must have a minimum current gain of 100
at VCE = 1.5V, and ICE = 500mA throughout the in-circuit
operating temperature range.



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