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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MB96310 датащи(PDF) 70 Page - Cypress Semiconductor |
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MB96310 датащи(HTML) 70 Page - Cypress Semiconductor |
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70 / 82 page  Document Number: 002-04592 Rev. *A Page 69 of 81 MB96310 Series 14.7 FLASH memory program/erase characteristics *1: This value was converted from the results of evaluating the reliability of the technology (using Arrhenius equation to convert high temperature measurements into normalized value at 85oC) (TA = -40°C to 105°C, VCC = AVCC = 3.0V to 5.5V, VSS = AVSS = 0V) Parameter Value Unit Remarks Min Typ Max Sector erase time - 0.9 3.6 s Without erasure pre-programming time Chip erase time - n*0.9 n*3.6 s Without erasure pre-programming time (n is the number of Flash sector of the device) Word (16-bit width) programming time - 23 370 us Without overhead time for submitting write command Program/Erase cycle 10000 - - cycle Flash data retention time 20 - - year *1 |
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