| производитель | номер детали | датащи | подробное описание детали |
Infineon Technologies A...
|
PTFB201402FC |
841Kb/14P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2016-06-14 |
| PXAC243502FV |
1Mb/10P |
High Power RF LDMOS Field Effect Transistor
Rev. 03.1, 2015-04-13 |
| PTFB183408SV |
248Kb/15P |
High Power RF LDMOS Field Effect Transistor
Rev. 03, 2014-03-07 |
| PTFC270101M |
409Kb/21P |
High Power RF LDMOS Field Effect Transistor
Rev. 04, 2015-04-01 |
| PTF080101 |
64Kb/4P |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ
2004-03-08 |
| PTFA220081M |
1Mb/17P |
High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz
Rev. 04, 2010-06-09 |
| PTFA220121M |
245Kb/19P |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
Rev. 07, 2010-04-15 |
| PTFB213004F |
674Kb/16P |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
Rev. 05.2, 2010-12-09 |
| PTF180101M |
314Kb/8P |
High Power RF LDMOS Field Effect Transistor 10 W, 1.0 ??2.0 GHz
Rev. 05.1, 2009-02-18 |
| PTFB183404E |
911Kb/18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
Rev. 04.1, 2016-06-10 |
| PTFB241402F |
810Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 04.1, 2016-06-15 |
| PTFB183404E |
727Kb/18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz
Rev. 04, 2010-11-17 |
| PTFB241402F |
556Kb/13P |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ??2400 MHz
Rev. 03, 2010-04-19 |
Cree, Inc
|
PTFB183404E |
649Kb/18P |
High Power RF LDMOS Field Effect Transistors 340 W, 1805 ??1880 MHz |
Infineon Technologies A...
|
PTF210101M |
276Kb/8P |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz
Rev. 02.1, 2009-02-18 |
| PTF080101M |
258Kb/8P |
High Power RF LDMOS Field Effect Transistor 10 W, 450 ??960 MHz
Rev. 02.1, 2009-02-18 |
| PTFB213004F |
740Kb/16P |
High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz
Rev. 05.3, 2016-06-15 |
| PTFA220041M |
1Mb/18P |
High Power RF LDMOS Field Effect Transistor 4 W, 700 - 2200 MHz
Rev. 08, 2010-06-07 |
Cree, Inc
|
PTFB213004F |
528Kb/16P |
High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz |
Freescale Semiconductor...
|
AFT18S230S |
409Kb/13P |
RF Power LDMOS Transitor |
Russian ▼ 
English
Chinese
German
Japanese
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
