PTFB213004F датащи(PDF) - Cree, Inc

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PTFB213004F датащи (PDF) - Cree, Inc

PTFB213004F Datasheet PDF - Cree, Inc


номер детали	PTFB213004F

скачать	PTFB213004F скачать

объем файла	528.45 Kbytes

Page	16 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

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подробное описание детали

High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

PTFB213004F Datasheet (PDF)

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PTFB213004F Datasheet PDF - Cree, Inc


номер детали	PTFB213004F

скачать	PTFB213004F Click to download

объем файла	528.45 Kbytes

Page	16 Pages

производитель	CREE [Cree, Inc]

домашняя страница	http://www.cree.com/

Logo

подробное описание детали	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz

PTFB213004F датащи (HTML) - Cree, Inc

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PTFB213004F Datasheet HTML 10Page - Cree, Inc

PTFB213004F Информация о продукте

Description
The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band. Features include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package.

Features
• Broadband internal matching
• Enhanced for use in DPD error correction systems
• Wide video bandwidth
• Typical single-carrier WCDMA performance at
2170 MHz, 30 V
- POUT = 49.5 dBm Avg
- Gain = 17.5 dB
- Efficiency = 30%
• Increased negative gate-source voltage range for
improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 300 W
(CW) output power
• Excellent thermal stability
• Integrated ESD protection
• Pb-free and RoHS-compliant

Аналогичный номер детали - PTFB213004F

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTFB213004F	674Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz Rev. 05.2, 2010-12-09
	PTFB213004F	740Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004FV2R0	740Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004FV2R0XTMA1	740Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15
	PTFB213004FV2R250	740Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15

Аналогичное описание - PTFB213004F

производитель	номер детали	датащи	подробное описание детали
Infineon Technologies A...	PTF210301	337Kb / 8P	LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz 2003-12-22
	PTF210451	406Kb / 8P	LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz 2003-12-22
	PTF210901	266Kb / 8P	LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz 2004-01-16
	PTF211301	449Kb / 9P	LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz 2004-01-02
	PTF211802	169Kb / 8P	LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz 2004-02-13
Tyco Electronics	MAPLST2122-030CF	162Kb / 5P	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
Tyco Electronics	MAPLST2122-060CF	172Kb / 5P	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V
Infineon Technologies A...	PTF210101M	276Kb / 8P	High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz Rev. 02.1, 2009-02-18
	PTFB213004F	674Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz Rev. 05.2, 2010-12-09
	PTFB213004F	740Kb / 16P	High Power RF LDMOS Field Effect Transistor 300 W, 2110 ??2170 MHz Rev. 05.3, 2016-06-15

О Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Эта информация предназначена только для общих информационных целей, мы не несем ответственности за любые убытки или ущерб, вызванные вышеуказанной информацией.

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