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LTC3703 датащи(PDF) 17 Page - Linear Technology |
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LTC3703 датащи(HTML) 17 Page - Linear Technology |
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17 / 32 page ![]() LTC3703 17 3703f Figure 10a. VCC Generated from 10V < VOUT < 15V APPLICATIO S I FOR ATIO VCC DRVCC VIN TG SW BG BGRTN LTC3703 VOUT 10V TO 15V + COUT 3703 F10a + CIN + 1 µF VIN L1 12V VCC DRVCC VIN TG SW BG BGRTN LTC3703 VOUT <10V + COUT 3703 F10b + CIN C9 4.7 µF 6.3V VIN L1 12V C10 1 µF 16V VIN SW GND SHDN FB R17 1M 1% R17 110k 1% LT1613 D2 ZHCS400 L2 10 µH Figure 10b. VCC Generated from VOUT < 10V is above the input supply: VBOOST = VIN + VDRVCC. The value of the boost capacitor CB needs to be 100 times that of the total input capacitance of the top side MOSFET(s). The reverse breakdown of the external diode, DB, must be greater than VIN(MAX). Another important consideration for the external diode is the reverse recovery and reverse leakage, either of which may cause excessive reverse current to flow at full reverse voltage. If the reverse current times reverse voltage exceeds the maximum VCC DRVCC FCB GND VIN TG1 SW BG1 BGRTN LTC3703 VOUT VSEC + COUT + 1 µF 3703 F10c R1 VIN T1 OPTIONAL VCC CONNECTION 10V < VSEC < 15V R2 + CIN 12V N 1 VCC DRVCC VIN TG SW BG BGRTN LTC3703 VOUT + COUT 3703 F10d + + CIN VIN (<40V) L1 1 µF 12V BAT85 BAT85 BAT85 VN2222LL 0.22 µF Figure 10c. Secondary Output Loop and VCC Connection Figure 10d. Capacitive Charge Pump for VCC (VIN < 40V) allowable power dissipation, the diode may be damaged. For best results, use an ultrafast recovery silicon diode such as the BAS21. An internal undervoltage lockout (UVLO) monitors the voltage on DRVCC to ensure that the LTC3703 has suffi- cient gate drive voltage. If the DRVCC voltage falls below the UVLO threshold, the LTC3703 shuts down and the gate drive outputs remain low. |
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