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STA311B датащи(PDF) 16 Page - STMicroelectronics |
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STA311B датащи(HTML) 16 Page - STMicroelectronics |
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16 / 102 page ![]() Electrical characteristics STA311B 16/102 DocID024340 Rev 1 3.4 Electrical specifications The following specifications are valid for VDD =3.3 V ± 0.3 V, VSA=0V and Tamb =25 °C, unless otherwise stated. Table 6. General interface electrical specifications Symbol Parameter Conditions Min Typ Max Unit Iil Low-level input, no pull-up Vi = 0 V 1 µA Iih High-level input, no pull-down Vi = VDD 2µA IOZ Tristate output leakage without pull-up/down Vi = VDD 2µA Vesd Electrostatic protection (human body model) Leakage < 1 A 2000 V Table 7. DC electrical characteristics: 3.3-V buffers Symbol Parameter Conditions Min Typ Max Unit VIL Low-level input voltage 0.8 V VIH High-level input voltage 2.0 V VILhyst Low-level threshold Input falling 0.8 1.35 V VIHhyst High-level threshold Input rising 1.3 2.0 V Vhyst Schmitt trigger hysteresis 0.3 0.8 V Vol Low-level output IoI = 100 µA 0.2 V Voh High-level output Ioh = -100 µA VDD- 0.2 V Ioh = -2 mA 2.4 V Idd Quiescent current Reset conditions 15 mA Normal conditions with CKOUT 60 mA fCKOUT Reset=1 PWDN=1 2.85 MHz |
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