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MDS3753E датащи(PDF) 4 Page - MagnaChip Semiconductor.

номер детали MDS3753E
подробное описание детали  P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDS3753E датащи(HTML) 4 Page - MagnaChip Semiconductor.

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Nov 2011 Version 1.1
MagnaChip Semiconductor Ltd.
4
10
-1
10
0
10
1
10
2
10
-2
10
-1
10
0
10
1
10
2
10
3
100 s
10 s
1 s
100 s
100 ms
DC
10 ms
1 ms
Operation in This Area
is Limited by R
DS(on)
Single Pulse
R
thJA=125
℃
/W
T
A=25
℃
-V
DS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs. Case
Temperature
Fig.11 Transient Thermal Response Curve
0
2
4
6
8
10
12
0
2
4
6
8
10
V
DS = -32V
※ Note : I
D = -4.7A
Q
G, Total Gate Charge [nC]
0
10
20
30
0.0
400.0p
800.0p
1.2n
1.6n
2.0n
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
-V
DS, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
T
A, Case Temperature [
℃
]
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
※ Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z
θ JA* Rθ JA(t) + TA
R
Θ JA=125℃
/W
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]



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