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MDS3753E датащи(PDF) 3 Page - MagnaChip Semiconductor.

номер детали MDS3753E
подробное описание детали  P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm)
PDF  6 Pages
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производитель  MGCHIP [MagnaChip Semiconductor.]
домашняя страница  http://www.magnachip.co.kr
Logo MGCHIP - MagnaChip Semiconductor.

MDS3753E датащи(HTML) 3 Page - MagnaChip Semiconductor.

  MDS3753E Datasheet HTML 1Page - MagnaChip Semiconductor. MDS3753E Datasheet HTML 2Page - MagnaChip Semiconductor. MDS3753E Datasheet HTML 3Page - MagnaChip Semiconductor. MDS3753E Datasheet HTML 4Page - MagnaChip Semiconductor. MDS3753E Datasheet HTML 5Page - MagnaChip Semiconductor. MDS3753E Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Nov 2011 Version 1.1
MagnaChip Semiconductor Ltd.
3
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Area
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.5 Transfer Characteristics
Fig.6
Body
Diode
Forward
Voltage
Variation
with
Source
Current
and
Temperature
0
1
2
3
4
5
0
4
8
12
16
20
-V
GS, Gate-Source Voltage [V]
T
A=25
℃
※ Notes :
V
DS = -10V
-50
-25
0
25
50
75
100
125
150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
※ Notes :
1. V
GS = -10 V
2. I
D = -3.3 A
T
J, Junction Temperature [
oC]
0.0
0.5
1.0
1.5
2.0
0
5
10
15
20
-4.0V
-3.5V
V
GS = -10V
-4.5V
-6.0V
-5.0V
-3.0V
-V
DS, Drain-Source Voltage [V]
5
10
15
20
10
20
30
40
50
60
V
GS = -10V
V
GS = -4.5V
-I
D, Drain Current [A]
2
4
6
8
10
0
20
40
60
80
100
T
A = 25
℃
T
A = 125
℃
-V
GS, Gate to Source Volatge [V]
0.2
0.4
0.6
0.8
1.0
1.2
10
-1
10
0
10
1
T
A=125
℃
※ Notes :
V
GS = 0V
25
℃
-V
SD, Source-Drain voltage [V]



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