MDS3753E datasheet(2/6 Pages) MGCHIP

2 / 6 page

Nov 2011 Version 1.1

MagnaChip Semiconductor Ltd.

Ordering Information

Part Number

Temp. Range

Package

Packing

RoHS Status

MDS3753EURH

-55~150

SO-8

Tape & Reel

Halogen Free

Electrical Characteristics (TJ =25

oC unless otherwise noted)

Characteristics

Symbol

Test Condition

Min

Typ

Max

Unit

Static Characteristics

Drain-Source Breakdown Voltage

BVDSS

ID = -250μA, VGS = 0V

-40

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250μA

-1.0

-1.8

-3.0

Drain Cut-Off Current

IDSS

VDS = -40V, VGS = 0V

-10

μA

Gate Leakage Current

IGSS

VGS = ±16V, VDS = 0V

±10

Drain-Source ON Resistance

RDS(ON)

VGS = -10V, ID = -3.3A

mΩ

VGS = -4.5V, ID = -3.3A

Forward Transconductance

gFS

VDS = -10V, ID = -3.3A

Dynamic Characteristics

Total Gate Charge

VDD = -32V, ID = -4.7A,VGS = -10V

32.7

Gate-Source Charge

Qgs

4.1

Gate-Drain Charge

Qgd

7.4

Input Capacitance

Ciss

VDS = -15V, VGS = 0V, f = 1.0MHz

1423

Reverse Transfer Capacitance

Crss

129

Output Capacitance

Coss

221

Turn-On Delay Time

td(on)

VGS = -10V ,VDD = -20V, ID = -3.3A

RGEN = 4.7Ω

14.7

Turn-On Rise Time

7.1

Turn-Off Delay Time

td(off)

44.2

Turn-Off Fall Time

9.0

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage

VSD

IS = -4.7A, VGS = 0V

0.81

1.2

Reverse Recovery Time

trr

IS = -4.7A, di/dt=100A/us

Reverse Recovery Charge

Qrr

36.5

Note :

1. Surface mounted FR4 board with 2oz. Copper.

2. Starting TJ=25°C, L=1mH, IAS=-14A VDD=-20V, VGS=-10V

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