| поискавой системы для электроныых деталей |
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MDS3753E датащи(PDF) 1 Page - MagnaChip Semiconductor. |
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MDS3753E датащи(HTML) 1 Page - MagnaChip Semiconductor. |
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1 / 6 page ![]() Nov 2011 Version 1.1 MagnaChip Semiconductor Ltd. 1 D G S G S Absolute Maximum Ratings (TA =25 oC unless otherwise noted) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS -40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 1) ID -7.1 A Pulsed Drain Current IDM -50 A Power Dissipation PD 2.5 W Single Pulse Avalanche Energy (Note 2) EAS 98 mJ Junction and Storage Temperature Range TJ, Tstg -55~150 oC Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 50 oC/W Thermal Resistance, Junction-to-Case RθJC 25 MDS3753E P-Channel Trench MOSFET, -40V, -7.1A, 30m Ω General Description The MDS3753E uses advanced MagnaC hip’s MOSFET Technology to provide low on-state resistance, high switching performance and excellent reliability Low RDS(ON) and low gate charge operation offer superior benefit in the application. 1(S) 2(S) 3(S) 4(G) 8(D) 7(D) 6(D) 5(D) Features VDS = -40V ID = -7.1A @ VGS = 10V RDS(ON) <30m @ V GS = -10V <37m @ V GS = -4.5V Applications Inverters General purpose applications |
Аналогичный номер детали - MDS3753E |
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Аналогичное описание - MDS3753E |
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