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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM32L100RC датащи(PDF) 69 Page - STMicroelectronics |
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STM32L100RC датащи(HTML) 69 Page - STMicroelectronics |
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69 / 104 page  DocID024995 Rev 4 69/104 STM32L100RC 96 Flash memory and data EEPROM Table 34. Flash memory and data EEPROM characteristics Symbol Parameter Conditions Min Typ Max(1) 1. Guaranteed by design, not tested in production. Unit VDD Operating voltage Read / Write / Erase -1.65 - 3.6 V tprog Programming/ erasing time for byte / word / double word / half-page Erasing - 3.28 3.94 ms Programming - 3.28 3.94 IDD Average current during the whole programming / erase operation TA = 25 °C, VDD = 3.6 V - 600 µA Maximum current (peak) during the whole programming / erase operation -1.5 2.5 mA Table 35. Flash memory and data EEPROM endurance and retention Symbol Parameter Conditions Value Unit Min(1) 1. Guaranteed by characterization results, not tested in production. Typ Max NCYC(2) Cycling (erase / write) Program memory TA = -40°C to 105 °C 10 -- kcycles Cycling (erase / write) EEPROM data memory 300 -- tRET(2) 2. Characterization is done according to JEDEC JESD22-A117. Data retention (program memory) after 10 kcycles at TA = 85 °C TRET = +85 °C 30 - - years Data retention (EEPROM data memory) after 300 kcycles at TA = 85 °C 30 - - Data retention (program memory) after 10 kcycles at TA = 105 °C TRET = +105 °C 10 - - Data retention (EEPROM data memory) after 300 kcycles at TA = 105 °C 10 - - |
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