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STM32L100RC датащи(PDF) 65 Page - STMicroelectronics |
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STM32L100RC датащи(HTML) 65 Page - STMicroelectronics |
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65 / 104 page ![]() DocID024995 Rev 4 65/104 STM32L100RC 96 6.3.7 Internal clock source characteristics The parameters given in Table 29 are derived from tests performed under the conditions summarized in Table 12. High-speed internal (HSI) RC oscillator Low-speed internal (LSI) RC oscillator Table 29. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency VDD = 3.0 V - 16 - MHz TRIM (1)(2) 1. The trimming step differs depending on the trimming code. It is usually negative on the codes which are multiples of 16 (0x00, 0x10, 0x20, 0x30...0xE0). HSI user-trimmed resolution Trimming code is not a multiple of 16 - ± 0.4 0.7 % Trimming code is a multiple of 16 - - ± 1.5 % ACCHSI(2) 2. Guaranteed by characterization results, not tested in production. Accuracy of the factory-calibrated HSI oscillator VDDA = 3.0 V, TA = 25 °C -1(3) 3. Guaranteed by test in production. -1(3) % VDDA = 3.0 V, TA = 0 to 55 °C -1.5 - 1.5 % VDDA = 3.0 V, TA = -10 to 70 °C -2 - 2 % VDDA = 3.0 V, TA = -10 to 85 °C -2.5 - 2 % VDDA = 3.0 V, TA = -10 to 105 °C -4 - 2 % VDDA = 1.65 V to 3.6 V TA = -40 to 105 °C -4 - 3 % tSU(HSI)(2) HSI oscillator startup time - - 3.7 6 µs IDD(HSI)(2) HSI oscillator power consumption - - 100 140 µA Table 30. LSI oscillator characteristics Symbol Parameter Min Typ Max Unit fLSI(1) 1. Guaranteed by test in production. LSI frequency 26 38 56 kHz DLSI(2) 2. This is a deviation for an individual part, once the initial frequency has been measured. LSI oscillator frequency drift 0°C ≤TA ≤ 105°C -10 - 4 % tsu(LSI)(3) 3. Guaranteed by design, not tested in production. LSI oscillator startup time - - 200 µs IDD(LSI)(3) LSI oscillator power consumption - 400 510 nA |
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