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STM32L062T8 датащи(PDF) 69 Page - STMicroelectronics

номер детали STM32L062T8
подробное описание детали  Ultra-low-power platform
PDF  118 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM32L062T8 датащи(HTML) 69 Page - STMicroelectronics

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STM32L062x8
Electrical characteristics
98
6.3.9
Memory characteristics
RAM memory
Flash memory and data EEPROM
Table 43. RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode(1)
1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware
registers (only in Stop mode).
STOP mode (or RESET)
1.65
-
-
V
Table 44. Flash memory and data EEPROM characteristics
Symbol
Parameter
Conditions
Min
Typ
Max(1)
1. Guaranteed by design.
Unit
VDD
Operating voltage
Read / Write / Erase
-1.65
-
3.6
V
tprog
Programming time for
word or half-page
Erasing
-
3.28
3.94
ms
Programming
-
3.28
3.94
IDD
Average current during
the whole programming /
erase operation
TA = 25 °C, VDD = 3.6 V
-
500
700
µA
Maximum current (peak)
during the whole
programming / erase
operation
-1.5
2.5
mA
Table 45. Flash memory and data EEPROM endurance and retention
Symbol
Parameter
Conditions
Value
Unit
Min(1)
NCYC(2)
Cycling (erase / write)
Program memory
TA = -40°C to 105 °C
10
kcycles
Cycling (erase / write)
EEPROM data memory
100
Cycling (erase / write)
Program memory
TA = -40°C to 125 °C
0.2
Cycling (erase / write)
EEPROM data memory
2



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