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STM8TL53x4 датащи(PDF) 56 Page - STMicroelectronics

номер детали STM8TL53x4
подробное описание детали  Operating conditions
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STM8TL53x4 датащи(HTML) 56 Page - STMicroelectronics

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Electrical parameters
STM8TL52x4 STM8TL53x4
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DocID022344 Rev 7
9.3.8
I/O port pin characteristics
General characteristics
Subject to general operating conditions for VDD and TA unless otherwise specified. All
unused pins must be kept at a fixed voltage: using the output mode of the I/O for example or
an external pull-up or pull-down resistor.
Figure 17. Typical pull-up resistance RPU vs. VDD with VIN=VSS
Table 31. I/O static characteristics (1)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIL
Input low level voltage(2)
Standard I/Os
VSS0.3
-
0.3 x VDD
V
VIH
Input high level voltage(2)
Standard I/Os
0.70 x VDD
-VDD+0.3
Vhys
Schmitt trigger voltage hysteresis(3)
Standard I/Os
-
200
-
mV
Ilkg
Input leakage current(4)
VSS VIN VDD
--
50
nA
VSS VIN Vreg Rx,
Tx I/Os
--
50
RPU
Weak pull-up equivalent resistor(5)
VIN VSS
30
45
60
k
CIO(6)
I/O pin capacitance
-
-
5
-
pF
1. VDD = 3.0 V, TA = 40 to 85 °C unless otherwise specified.
2. Data based on characterization results, not tested in production.
3. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
4. The maximum value may be exceeded if negative current is injected on adjacent pins.
5. RPU pull-up equivalent resistor based on a resistive transistor (corresponding IPU current characteristics.
6. Data guaranteed by Design, not tested in production.



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