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STM8TL53x4 датащи(PDF) 54 Page - STMicroelectronics |
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STM8TL53x4 датащи(HTML) 54 Page - STMicroelectronics |
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54 / 84 page ![]() Electrical parameters STM8TL52x4 STM8TL53x4 54/84 DocID022344 Rev 7 Figure 16. Typical LSI frequency vs. VDD 9.3.7 Memory characteristics TA = 40 to 85°C unless otherwise specified. RAM characteristics Flash memory characteristics Table 27. RAM and hardware registers Symbol Parameter Conditions Min. Typ. Max. Unit VRM Data retention mode (1) 1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by characterization, not tested in production. Halt mode (or Reset) 1.4 - - V Table 28. Flash program memory Symbol Parameter Conditions Min. Typ. Max.(1) Unit VDD Operating voltage (all modes, read/write/erase) fMASTER = 16 MHz 1.65 - 3.6 V tprog Programming time for 1 or 64 byte (block) erase/write cycles (on programmed byte) -6- ms Programming time for 1 to 64 byte (block) write cycles (on erased byte) -3- ms Iprog Programming/ erasing consumption TA+25 °C, VDD = 3.0 V - 0.7 - mA TA+25 °C, VDD = 1.8 V - - 1. Data based on characterization results, not tested in production. |
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