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STM8S105C4 датащи(PDF) 87 Page - STMicroelectronics

номер детали STM8S105C4
подробное описание детали  Extended instruction set
PDF  121 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM8S105C4 датащи(HTML) 87 Page - STMicroelectronics

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STM8S105x4/6
Electrical characteristics
90
Figure 45. ADC accuracy characteristics
1. Example of an actual transfer curve
2. The ideal transfer curve
3. End point correlation line
ET = Total unadjusted error: maximum deviation between the actual and the ideal transfer curves.
EO = Offset error: deviation between the first actual transition and the first ideal one.
EG = Gain error: deviation between the last ideal transition and the last actual one.
ED = Differential linearity error: maximum deviation between actual steps and the ideal one.
EL = Integral linearity error: maximum deviation between any actual transition and the end point correlation
line.
Figure 46. Typical application with ADC
1. Legend: RAIN = external resistance, CAIN = capacitors, Csamp = internal sample and hold capacitor.
2. ADC accuracy vs. negative injection current: Injecting negative current on any of the analog input pins
should be avoided as this significantly reduces the accuracy of the conversion being performed on another
analog input. It is recommended to add a Schottky diode (pin to ground) to standard analog pins which may
potentially inject negative current. Any positive injection current within the limits specified for IINJ(PIN) and
IINJ(PIN) in Section 10.3.6 does not affect the ADC accuracy.
EO
EG
1LSBIDEAL
1LSBIDEAL
VDDA VSSA
–
1024
-----------------------------------------
=
1023
1022
1021
5
4
3
2
1
0
7
6
1
234
567
1021102210231024
(1)
(2)
ET
ED
EL
(3)
VDDA
VSSA



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