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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S105C4 датащи(PDF) 69 Page - STMicroelectronics |
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STM8S105C4 датащи(HTML) 69 Page - STMicroelectronics |
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69 / 121 page  DocID14771 Rev 15 69/121 STM8S105x4/6 Electrical characteristics 90 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Figure 21. Typical HSI accuracy @ VDD = 5 V vs 5 temperatures Table 33. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz ACCHS Accuracy of HSI oscillator User-trimmed with CLK_HSITRIMR register for given VDD and TA conditions(1) 1. Refer to application note. -- 1(2) 2. Guaranteed by design, not tested in production. % HSI oscillator accuracy (factory calibrated) VDD V, TA 25 °C(3) 3. Data based on characterization results, not tested in production. -1.0 - 1.0 VDD= 5 V, -25°C TA 85 °C -2.0 - 2.0 2.95 V VDD 5.5 V, -40°C TA 125 °C -3.0(3) -3.0(3) tsu(HSI) HSI oscillator wakeup time including calibration -- - 1.0(2) µs IDD(HSI) HSI oscillator power consumption - - 170 250(3) µA |
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