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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8S105C4 датащи(PDF) 74 Page - STMicroelectronics |
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STM8S105C4 датащи(HTML) 74 Page - STMicroelectronics |
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74 / 121 page  Electrical characteristics STM8S105x4/6 74/121 DocID14771 Rev 15 Figure 26. Typical pull-up resistance vs VDD @ 4 temperatures Figure 24. Typical VIL and VIH vs VDD @ 4 temperatures Figure 25. Typical pull-up current vs VDD @ 4 temperatures Table 38. Output driving current (standard ports) Symbol Parameter Conditions Min Max Unit VOL Output low level with 8 pins sunk IIO= 10 mA, VDD = 5 V -2.0 V Output low level with 4 pins sunk IIO= 4 mA, VDD = 3.3 V -1.0(1) 1. Data based on characterization results, not tested in production VOH Output high level with 8 pins sourced IIO= 10 mA, VDD = 5 V 2.4 - Output high level with 4 pins sourced IIO= 4 mA, VDD = 3.3 V 2.0(1) - |
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