STD110N8F6 datasheet(4/16 Pages) STMICROELECTRONICS

номер детали	STD110N8F6

подробное описание детали	Very low gate charge

PDF	16 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

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Electrical characteristics

STD110N8F6

4/16

DocID027274 Rev 1

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On/off-state

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 1 mA

IDSS

Zero-gate voltage

drain current

VGS = 0, VDS = 80 V

µA

VGS = 0, VDS = 80 V,

TC = 125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = +20 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 40 A

0.0056 0.0065

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 40 V, f = 1 MHz,

VGS = 0

9130

Coss

Output capacitance

320

Crss

Reverse transfer

capacitance

225

Total gate charge

VDD = 40 V, ID = 80 A,

VGS = 10 V

(see Figure 14)

150

Qgs

Gate-source charge

Qgd

Gate-drain charge

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 40 V, ID = 55 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

-24-

Rise time

td(off)

Turn-off delay time

162

Fall time

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