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STD110N8F6 датащи(PDF) 3 Page - STMicroelectronics

номер детали STD110N8F6
подробное описание детали  Very low gate charge
PDF  16 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
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STD110N8F6 датащи(HTML) 3 Page - STMicroelectronics

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DocID027274 Rev 1
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STD110N8F6
Electrical ratings
16
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
80
V
VGS
Gate-source voltage
±20
V
ID
Drain current (continuous) at TC = 25 °C
80
A
ID
Drain current (continuous) at TC = 100 °C
72
A
IDM
(1)
1.
Pulse width is limited by safe operating area
Drain current (pulsed)
320
A
PTOT
Total dissipation at TC = 25 °C
167
W
EAS
(2)
2.
Starting TJ = 25 °C, ID = 55 A, VDD = 60 V
Single pulse avalanche energy
180
mJ
TJ
Operating junction temperature
-55 to 175
°C
Tstg
Storage temperature
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
0.9
°C/W
Rthj-pcb
(1)
1.
When mounted on 1 inch² FR-4, 2 Oz copper board.
Thermal resistance junction-pcb max.
50
°C/W



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