STD110N8F6 datasheet(1/16 Pages) STMICROELECTRONICS

номер детали	STD110N8F6

подробное описание детали	Very low gate charge

PDF	16 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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This is information on a product in full production.

December 2014

DocID027274 Rev 1

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STD110N8F6

N-channel 80 V, 0.0056

Ω typ.,80 A, STripFET™ F6

Power MOSFET in a DPAK package

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Very low on-resistance

• Very low gate charge

• High avalanche ruggedness

• Low gate drive power loss

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using the STripFET™ F6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.

Order code

VDS

RDS(on)max

ID

PTOT

STD110N8F6

80 V

0.0065

Ω

80 A

167 W

Table 1. Device summary

Order code

Marking

Package

Packing

STD110N8F6

110N8F6

DPAK

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Аналогичный номер детали - STD110N8F6

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Inchange Semiconductor ...	STD110N8F6	360Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - STD110N8F6

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STD110N8F6 датащи(PDF) 1 Page - STMicroelectronics

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Аналогичный номер детали - STD110N8F6

Аналогичное описание - STD110N8F6

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