If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Value

Parameter

Symbol

Min

Typical

Max

Unit

V

CCMAIN

−0.3

6.5

V

Power Supply Voltage

V

CCAUX

−0.3

6.5

V

Voltage on any pin with GND=0V

V

I

−0.3

V

V

Storage Temperature Range

T

S

−65

+150

˚C

Lead Temp. (solder 4 sec)

T

L

+260

˚C

ESD-Human Body Model (Note 2)

2000

eV

Recommended Operating Conditions

Value

Parameter

Symbol

Min

Typical

Max

Unit

V

CCMAIN

2.7

3.6

V

Power Supply Voltage

V

CCAUX

V

CCMAIN

V

CCMAIN

V

Operating Temperature

T

A

−40

+85

˚C

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for

which the device is intended to be functional, but do not guarantee specific performance limits. Electrical Characteristics document specific minimum and/or maxi-

mum performance values at specified test conditions and are guaranteed. Typical values are for informational purposes only - based on design parameters or device

characterization and are not guaranteed.

Note 2: This device is a high performance RF integrated circuit and is ESD sensitive. Handling and assembly of this device should only be done on ESD-free work-

stations.

Electrical Characteristics

(V

Symbol

Parameter

Conditions

Min

Typ

Max

Units

GENERAL

I

CC

Power

Supply

Current

2 GHz + 500 MHz

Crystal Mode (Note 3)

5.0

mA

1.1 GHz + 500 MHz

Crystal Mode (Note 3)

4.0

mA

1.1 GHz + 1.1 GHz

Crystal Mode (Note 3)

5.0

mA

2 GHz Only

Crystal Mode (Note 3)

3.5

mA

1.1 GHz Only

Crystal Mode (Note 3)

2.5

mA

500 MHz Only

Crystal Mode (Note 3)

1.5

mA

I

CC-PWDN

Power Down Current

EN

1

µA

fin

fin Operating Frequency

fin Main 2 GHz Option

200

2000

MHz

fin Main and Aux 1.1 GHz Option

100

1100

MHz

fin Aux 500 MHz Option

40

500

MHz

OSC

IN

Oscillator Operating Frequency

Logic Mode (Note 3)

1

40

MHz

Crystal Mode (Note 3)

1

20

MHz

V

OSC

Oscillator Input Sensitivity

0.5

V

CC

V

PP

f

φ

Maximum Phase Detector Frequency

10

MHz

Pfin

Main and Aux RF Input Sensitivity

−15

0

dBm

CHARGE PUMP

ICP

o-source

RF Charge Pump Output Current

(See Programming Description 2.4)

VCPo = V

−1600

µA

ICP

o-sink

VCPo = V

1600

µA

ICP

o-source

VCPo = V

−160

µA

ICP

o-sink

VCPo = V

160

µA

ICP

o-Tri

0.5

≤ VCP

1

nA

DIGITAL INTERFACE (DATA, CLK, LE, EN, FoLD)

V

IH

High-Level Input Voltage

0.8V

CC

V

V

IL

Low-Level Input Voltage

0.2V

CC

V

3

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