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PSMN005 датащи(PDF) 7 Page - NXP Semiconductors

номер детали PSMN005
подробное описание детали  N-channel logic level TrenchMOS(TM) transistor
PDF  12 Pages
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производитель  PHILIPS [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN005 датащи(HTML) 7 Page - NXP Semiconductors

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October 1999
7
Rev 1.200
Philips Semiconductors
Product specification
PSMN005-55B;
PSMN005-55P
N-channel logic level TrenchMOS(TM) transistor
Fig.13. Typical turn-on gate-charge characteristics.
V
GS = f(QG)
Fig.14. Typical reverse diode current.
I
F = f(VSDS); conditions: VGS = 0 V; parameter Tj
Fig.15. Maximum permissible non-repetitive
avalanche current (I
AS) versus avalanche time (tAV);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
25
50
75
100
125
150
175
200
225
250
Gate charge, QG (nC)
Gate-source voltage, VGS (V)
ID = 75 A
Tj = 25 C
VDD = 11 V
VDD = 44 V
1
10
100
0.001
0.01
0.1
1
10
Avalanche time, tAV (ms)
Maximum Avalanche Current, IAS (A)
Tj prior to avalanche = 150 C
25 C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25



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