PSMN005 datasheet(6/12 Pages) PHILIPS

номер детали	PSMN005

подробное описание детали	N-channel logic level TrenchMOS(TM) transistor

PDF	12 Pages

Scroll/Zoom	100%

производитель	PHILIPS [NXP Semiconductors]

домашняя страница	http://www.nxp.com

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6 / 12 page

October 1999

Rev 1.200

Philips Semiconductors

Product speciﬁcation

PSMN005-55B;

PSMN005-55P

N-channel logic level TrenchMOS(TM) transistor

Fig.7. Typical transfer characteristics.

D = f(VGS)

Fig.8. Typical transconductance, T

j = 25 ˚C.

fs = f(ID)

Fig.9. Normalised drain-source on-state resistance.

DS(ON)/RDS(ON)25 ˚C = f(Tj)

Fig.10. Gate threshold voltage.

GS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS

Fig.11. Sub-threshold drain current.

D = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS

Fig.12. Typical capacitances, C

iss, Coss, Crss.

C = f(V

DS); conditions: VGS = 0 V; f = 1 MHz

0.5

1.5

2.5

3.5

100

ID/A

VGS/V

Tj =

175

Threshold Voltage, VGS(TO) (V)

0.25

0.5

0.75

1.25

1.5

1.75

2.25

-60

-40

-20

100 120 140 160 180

Junction Temperature, Tj (C)

typical

maximum

minimum

204060

100

150

gfs/S

ID/A

Drain current, ID (A)

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

0.5

1.5

2.5

Gate-source voltage, VGS (V)

minimum

typical

maximum

Normalised On-state Resistance

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

2.4

-60

-40

-20

100 120 140 160 180

Junction temperature, Tj (C)

100

1000

10000

100000

0.1

100

Drain-Source Voltage, VDS (V)

Capacitances, Ciss, Coss, Crss (pF)

Ciss

Coss

Crss

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