PL613-01

DS20005650A-page 4

 2016 Microchip Technology Inc.

Output High Voltage

2.4

—

—

V

3.3V

Output Current, Low Drive

4—

—

mA

Output Current, Standard Drive

8—

—

mA

Output Current, High Drive

16

—

—

mA

TABLE 1-2:

DC ELECTRICAL CHARACTERISTICS (CONTINUED)

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

TABLE 1-3:

CRYSTAL CHARACTERISTICS

Parameters

Symbol

Min.

Typ.

Max.

Units

Fundamental Crystal Resonator Frequency

10

—

40

MHz

Crystal Loading Rating

—15—

pF

Operating Drive Level

—

—

0.1

2

mW

Metal Can Crystal, Shunt Capacitance

C0

—

—

5.5

pF

Metal Can Crystal, ESR Max.

ESR

—

—

40

Ω

Small SMD Crystal, Shunt Capacitance

C0

—

—

2.5

pF

Small SMD Crystal, ESR Max.

ESR

—

—

60

Ω

TEMPERATURE SPECIFICATIONS (Note 1)

Parameters

Sym.

Min.

Typ.

Max.

Units

Conditions

Temperature Ranges

Storage Temperature Range

–65

—

+150

°C

—

Soldering Temperature

—

—

—

+260

°C

—

Ambient Operating Temperature Range

–40

—

+85

°C

—

Note 1:

Exposure of the device under conditions beyond the limits specified by Maximum Ratings for extended

periods may cause permanent damage to the device and affect product reliability. These conditions

represent a stress rating only, and functional operations of the device at these or any other conditions

above the operational limits noted in this specification is not implied. Operating temperature is guaranteed

by design. Parts are tested to commercial grade only.