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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8AL3188TCX датащи(PDF) 104 Page - STMicroelectronics |
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STM8AL3188TCX датащи(HTML) 104 Page - STMicroelectronics |
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104 / 131 page  Electrical parameters STM8AL318x STM8AL3L8x 104/131 DocID027179 Rev 6 9.3.10 Embedded reference voltage In the following table, data are based on characterization results, not tested in production, unless otherwise specified. Table 49. Reference voltage characteristics Symbol Parameter Conditions Min. Typ. Max. Unit IREFINT Internal reference voltage consumption - - 1.4 - µA TS_VREFINT(1)(2) ADC sampling time when reading the internal reference voltage -- 5 10 µs IBUF(1) Internal reference voltage buffer consumption (used for ADC) - - 13.5 25 µA VREFINT out Reference voltage output - 1.202 (3) 1.224 1.242 (3) V ILPBUF(1) Internal reference voltage low-power buffer consumption (used for comparators or output) - - 730 1200 nA IREFOUT(1)(4) Buffer output current - - - 1 µA CREFOUT Reference voltage output load - - - 50 pF tVREFINT(1) Internal reference voltage startup time -- 2 3 ms tBUFEN(1)(2) Internal reference voltage buffer startup time once enabled -- - 10 µs ACCVREFINT(5) Accuracy of VREFINT stored in the VREFINT_Factory_CONV byte -- - ± 5 mV STABVREFINT Stability of VREFINT over temperature -40 °C ≤TA ≤ 125 °C - 20 50 ppm/°C Stability of VREFINT over temperature 0 °C ≤TA ≤ 50 °C - - 20 ppm/°C STABVREFINT Stability of VREFINT after 1000 hours - - - TBD ppm 1. Guaranteed by design. 2. Defined when ADC output reaches its final value ±1/2LSB 3. Tested in production at VDD = 3 V ±10 mV. 4. To guarantee less than 1% VREFOUT deviation 5. Measured at VDD = 3 V ±10 mV. This value takes into account VDD accuracy and ADC conversion accuracy. |
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