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STM8AL3188TCX датащи(PDF) 72 Page - STMicroelectronics |
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STM8AL3188TCX датащи(HTML) 72 Page - STMicroelectronics |
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72 / 131 page ![]() Electrical parameters STM8AL318x STM8AL3L8x 72/131 DocID027179 Rev 6 Figure 13. Typical IDD(RUN) from RAM vs. VDD (HSI clock source), fCPU =16 MHz(1) 1. Typical current consumption measured with code executed from RAM. 1. CPU executing typical data processing 2. The run from RAM consumption is approximated with the linear formula: IDD(run_from_RAM) = Freq. * 95 µA/MHz + 250 µA 3. Guaranteed by characterization results. 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 32. 5. The run from Flash consumption is approximated with the linear formula: IDD(run_from_Flash) = Freq. * 200 µA/MHz + 330 µA 6. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 33 |
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