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STM8AL3188TCX датащи(PDF) 89 Page - STMicroelectronics

номер детали STM8AL3188TCX
подробное описание детали  Automotive 8-bit ultra-low-power MCU, 64 Kbyte Flash, RTC, LCD, data EEPROM, timers, USARTs, I2C, SPIs, ADC, DAC, COMPs
PDF  131 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STM8AL3188TCX датащи(HTML) 89 Page - STMicroelectronics

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STM8AL318x STM8AL3L8x
Electrical parameters
117
Flash memory
Data memory
Table 37. Flash program memory/data EEPROM memory
Symbol
Parameter
Conditions
Min.
Typ. Max.
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fSYSCLK = 16 MHz
1.65
-
3.6
V
tprog
Programming time for 1 or 128 byte (block)
erase/write cycles (on programmed byte)
--
6
-
ms
Programming time for 1 to 128 byte (block)
write cycles (on erased byte)
--
3
-
ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
-
0.7
-
mA
TA=+25 °C, VDD = 1.8 V
-
-
Table 38. Flash program memory
Symbol
Parameter
Conditions
Min.
Max.
Unit
TWE
Temperature for writing and erasing
-
-40
125
°C
NWE
Flash program memory endurance
(erase/write cycles)(1)
TA= 25 °C
1000
-
cycles
tRET
Data retention time
TA= 25 °C
40
-
years
TA= 55 °C
20
-
1. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a write/erase operation
addresses a single byte.
Table 39. Data memory
Symbol
Parameter
Conditions
Min.
Max.
Unit
TWE
Temperature for writing and erasing
-
-40
125
°C
NWE
Data memory endurance
(erase/write cycles)(1)
TA= 25 °C
300 k
-
cycles
TA= -40 to 125 °C
100 k(2)
-
tRET
Data retention time
TA= 25 °C
40(2) (3)
-
years
TA= 55 °C
20(2) (3)
-
1. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a write/erase operation
addresses a single byte.
2. More information on the relationship between data retention time and number of write/erase cycles is available in a
separate technical document.
3. Retention time for 256B of data memory after up to 1000 cycles at 125
°C.



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