CS89712 datasheet(147/170 Pages) CIRRUS

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CS89712

DS502PP2

147

6. ELECTRICAL/THERMAL INFO

6.1 Absolute Maximum Ratings

RECOMMENDED OPERATING CONDITIONS

6.2 DC Characteristics

All characteristics are specified at VDD = 3.3 volts and VSS = 0 volts over an operating temperature of 0° C to

+70° C for all frequencies of operation. The current consumption figures relate to typical conditions at 2.5 V core,

3.3V I/O, 18.432 MHz operation with the PLL enabled.

Notes: 1. The leakage value given assumes that the pin is configured as an input pin but is not currently being driven. An

input pin not driven will have a maximum leakage of 1

µA. When the pin is driven, there will be no leakage.

Assumes buffer has no pull-up or pull-down resistors.

3. The leakage value given assumes that the pin is configured as an output pin but is not currently being

driven. An output pin not driven will have leakage between 25 µA and 100 µA. When the pin is driven,

there will be no leakage. Note that this applies to all output pins and all I/O pins configured as outputs.

DC Core, PLL, and RTC Supply Voltage

2.9 V

DC I/O Supply Voltage (Pad Ring)

3.6 V

DC Pad Input Current

±10 mA/pin; ±100 mA cumulative

Storage Temperature, No Power

–40

°C to +125°C

DC core, PLL, and RTC Supply Voltage

2.5 V

± 0.2 V

DC I/O Supply Voltage (Pad Ring)

3.3V

± 0.165 V

DC Input / Output Voltage

0V – I/O supply voltage

Operating Temperature

Commercial 0

°C to +70°C

Parameter

Symbol

Min

Typ

Max

Unit

Conditions

CMOS input high voltage

VIH

1.7

VDD +

0.3

VVDDC = 2.5 V

VDDIO = 3.3 V

CMOS input low voltage

VIL

-0.3

0.8

VDDC = 2.5 V

VDDIO = 3.3 V

Schmitt trigger negative going threshold

VT-

0.8

1.2

(Typ)

Schmitt trigger hysteresis

Vhst

0.1

0.4

VIL to VIH

CMOS output high voltage

Output drive 1

Output drive 2

VOH

VDD –

0.2

2.5

IOH = 0.1 mA

OH = 4 mA

OH = 12 mA

CMOS output low voltage

Output drive 1

Output drive 2

VOL

0.3

0.5

IOL = –0.1 mA

OL = –4 mA

OL = –12 mA

Input leakage current

(Note 1)

IIN

10.0

µA

VIN = VDD or GND

Output tri-state leakage current

(Notes 2 and 3)

IOZ

100

µA

VOUT = VDD or GND

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