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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PSOC4100M датащи(PDF) 27 Page - Cypress Semiconductor |
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PSOC4100M датащи(HTML) 27 Page - Cypress Semiconductor |
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27 / 41 page  PSoC® 4: PSoC 4100M Family Datasheet Document Number: 001-96519 Rev. *E Page 27 of 41 Memory Table 24. Fixed SPI Master mode AC Specifications (Guaranteed by Characterization) Spec ID Parameter Description Min Typ Max Units Details/Conditions SID167 TDMO MOSI valid after Sclock driving edge – – 15 ns SID168 TDSI MISO valid before Sclock capturing edge. Full clock, late MISO Sampling used 20 – – ns SID169 THMO Previous MOSI data hold time with respect to capturing edge at Slave 0– – ns Table 25. Fixed SPI Slave mode AC Specifications (Guaranteed by Characterization) Spec ID Parameter Description Min Typ Max Units Details/Conditions SID170 TDMI MOSI valid before Sclock capturing edge 40 – – ns SID171 TDSO MISO valid after Sclock driving edge – – 42 + 3 × (1/FCPU) ns SID171A TDSO_ext MISO valid after Sclock driving edge in Ext. Clock mode – – 48 ns SID172 THSO Previous MISO data hold time 0 – – ns SID172A TSSELSCK SSEL Valid to first SCK Valid edge 100 – – ns Table 26. Flash DC Specifications Spec ID Parameter Description Min Typ Max Units Details/Conditions SID173 VPE Erase and program voltage 1.71 – 5.5 V Table 27. Flash AC Specifications Spec ID Parameter Description Min Typ Max Units Details/Conditions SID174 TROWWRITE Row (block) write time (erase and program) – – 20 ms Row (block) = 128 bytes SID175 TROWERASE Row erase time – – 13 ms SID176 TROWPROGRAM Row program time after erase – – 7 ms SID178 TBULKERASE Bulk erase time (128 KB) – – 35 ms SID179 TSECTORERASE Sector erase time (8 KB) – – 15 ms SID180 TDEVPROG Total device program time – – 15 seconds Guaranteed by characterization SID181 FEND Flash endurance 100 K – – cycles Guaranteed by characterization SID182 FRET Flash retention. TA 55 °C, 100 K P/E cycles 20 – – years Guaranteed by characterization SID182A Flash retention. TA 85 °C, 10 K P/E cycles 10 – – years Guaranteed by characterization SID182B FRETQ Flash retention. TA 105 °C, 10K P/E cycles, three years at TA ≥ 85 °C 10 20 – years Guaranteed by characterization. |
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