IRF7307

PD - 9.1242B

8/25/97

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve the

lowest possible on-resistance per silicon area. This

benefit, combined with the fast switching speed and

ruggedized device design that HEXFET Power

MOSFETs are well known for, provides the designer

with an extremely efficient device for use in a wide

variety of applications.

The SO-8 has been modified through a customized

leadframe for enhanced thermal characteristics and

multiple-die capability making it ideal in a variety of

power applications. With these improvements, multiple

devices can be used in an application with dramatically

reduced board space. The package is designed for

vapor phase, infra red, or wave soldering techniques.

Power dissipation of greater than 0.8W is possible in

a typical PCB mount application.

D1

N -C H AN N EL M O SF ET

P-CH ANNE L M OS FE T

D1

D2

D2

G1

S2

G2

S1

To p V ie w

8

1

2

3

4

5

6

7

SO-8

Description

N-Ch

P-Ch

20V

-20V

Max.

N-Channel

P-Channel

5.7

-4.7

5.2

-4.3

4.1

-3.4

Pulsed Drain Current



21

-17

Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/°C

Gate-to-Source Voltage

± 12

V

dv/dt

Peak Diode Recovery dv/dt

‚

5.0

-5.0

V/ns

Junction and Storage Temperature Range

-55 to + 150

°C

Parameter

Units

A

Absolute Maximum Ratings

Thermal Resistance Ratings

Parameter

Typ.

Max.

Units

Maximum Junction-to-Ambient

„

–––

62.5

°C/W