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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF7307 датащи(PDF) 2 Page - International Rectifier |
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IRF7307 датащи(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7307 Parameter Min. Typ. Max. Units Conditions N-Ch 20 — — VGS = 0V, ID = 250µA P-Ch -20 — — VGS = 0V, ID = -250µA N-Ch — 0.044 — Reference to 25°C, ID = 1mA P-Ch — -0.012 — Reference to 25°C, ID = -1mA — — 0.050 VGS = 4.5V, ID = 2.6A — — 0.070 VGS = 2.7V, ID = 2.2A — — 0.090 VGS = -4.5V, ID = -2.2A — — 0.140 VGS = -2.7V, ID = -1.8A N-Ch 0.70 — — VDS = VGS, ID = 250µA P-Ch -0.70 — — VDS = VGS, ID = -250µA N-Ch 8.30 — — VDS = 15V, ID = 2.6A P-Ch 4.00 — — VDS = -15V, ID = -2.2A N-Ch — — 1.0 VDS = 16V, VGS = 0V P-Ch — — -1.0 VDS = -16V, VGS = 0V, N-Ch — — 25 VDS = 16V, VGS = 0V, TJ = 125°C P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ± 12V N-Ch — — 20 P-Ch — — 22 N-Ch — — 2.2 P-Ch — — 3.3 N-Ch — — 8.0 P-Ch — — 9.0 N-Ch — 9.0 — P-Ch — 8.4 — N-Ch — 42 — P-Ch — 26 — N-Ch — 32 — P-Ch — 51 — N-Ch — 51 — P-Ch — 33 — LD Internal Drain Inductace N-P — 4.0 — Between lead tip LS Internal Source Inductance N-P — 6.0 — and center of die contact N-Ch — 660 — P-Ch — 610 — N-Ch — 280 — P-Ch — 310 — N-Ch — 140 — P-Ch — 170 — Parameter Min. Typ. Max. Units Conditions N-Ch — — 2.5 P-Ch — — -2.5 N-Ch — — 21 P-Ch — — -17 N-Ch — — 1.0 TJ = 25°C, IS = 1.8A, VGS = 0V P-Ch — — -1.0 TJ = 25°C, IS = -1.8A, VGS = 0V N-Ch — 29 44 P-Ch — 56 84 N-Ch — 22 33 P-Ch — 71 110 ton Forward Turn-On Time N-P V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 23 ) Pulse width ≤ 300µs; duty cycle ≤ 2%. Notes: Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Source-Drain Ratings and Characteristics V V/°C Ω V S µA nC ns nH pF N-Channel ID = 2.6A, VDS = 16V, VGS = 4.5V P-Channel ID = -2.2A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 2.6A, RG = 6.0Ω, RD = 3.8Ω P-Channel VDD = -10V, ID = -2.2A, RG = 6.0Ω, RD = 4.5Ω N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz N-Ch P-Ch IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF = 2.6A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -2.2A, di/dt = 100A/µs Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD) N-Channel I SD ≤ 2.6A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.2A, di/dt ≤ 50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Surface mounted on FR-4 board, t ≤ 10sec. |
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