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IRF7307 датащи(PDF) 3 Page - International Rectifier

номер детали IRF7307
подробное описание детали  Power MOSFET
PDF  10 Pages
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производитель  IRF [International Rectifier]
домашняя страница  http://www.irf.com
Logo IRF - International Rectifier

IRF7307 датащи(HTML) 3 Page - International Rectifier

  IRF7307 Datasheet HTML 1Page - International Rectifier IRF7307 Datasheet HTML 2Page - International Rectifier IRF7307 Datasheet HTML 3Page - International Rectifier IRF7307 Datasheet HTML 4Page - International Rectifier IRF7307 Datasheet HTML 5Page - International Rectifier IRF7307 Datasheet HTML 6Page - International Rectifier IRF7307 Datasheet HTML 7Page - International Rectifier IRF7307 Datasheet HTML 8Page - International Rectifier IRF7307 Datasheet HTML 9Page - International Rectifier Next Button
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IRF7307
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 3. Typical Transfer Characteristics
1
10
100
1000
0.1
1
1 0
1 0 0
V
, D rain-to- So urc e V oltage (V )
DS
20µ s P U LS E W IDTH
T
= 25 °C
A
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
B OTTOM 1.5V
1.5 V
J
1
10
100
1000
0.1
1
1 0
1 0 0
V
, D rain- to- So urc e V oltage (V )
DS
A
VGS
TOP
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
B OTTOM 1.5V
1.5V
20 µs P U LS E W IDTH
T
= 15 0° C
J
1
10
100
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T = 25 ° C
T = 150° C
J
J
GS
V
, G a te - to -S o ur c e V olta ge (V )
A
V
= 1 5V
20µs PU LSE W ID T H
DS
0.0
0.5
1.0
1.5
2.0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
100 120 140 160
J
T
, J unction T em perature (°C )
A
V
= 4.5 V
GS
I
= 4 .3A
D
0
300
600
900
1200
1
1 0
100
DS
V
, Drain -to -S ourc e Voltage (V )
A
V
= 0V ,
f = 1M H z
C
= C
+ C
,
C
SH O R T E D
C
= C
C
= C
+ C
GS
is s
g s
g d
d s
rs s
g d
o s s
d s
g d
Cis s
Cos s
Crs s
0
2
4
6
8
10
0
5
10
15
20
25
Q
, T ota l G ate C har ge (nC )
G
A
I
= 2 .6A
V
= 16 V
D
DS
FO R TE S T CIR CUIT
S E E F I GU R E 11
N-Channel



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