Generation V Technology Ultra
Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Dynamic dv/dt Rating
Fast Switching
Lead-Free
100
Features
VDS (V) = 20V
RDS(ON) 53m (VGS = 4.5V)
RDS(ON) 70m (VGS = 2.7V)
VDS (V) = -20V
RDS(ON) m (VGS = -4.5V)

RDS(ON) 140m (VGS = -2.7V)
N-Ch：
P-Ch：




The so-8 has been modified through a customized
leadtrame for enhanced thermal characteristics and
multiple die capability making it ideal in a varietyof power
applications. Withtheseimprovements. multiple devices can
be used in an application with dramatically reduced board
space. The package is designed for vapor phase. infra red.
or wave soldering technigues. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.