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LP5550 датащи(PDF) 3 Page - Texas Instruments |
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LP5550 датащи(HTML) 3 Page - Texas Instruments |
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3 / 28 page ![]() LP5550 www.ti.com SNVS378G – OCTOBER 2005 – REVISED APRIL 2013 Pin Descriptions (continued) Pin No. Name I/O Type Description 9 VBATSW P P Battery supply voltage for switching regulator 10 SW O A Switcher pin connected to coil 11 SWGND G G Switcher ground 12 VBAT2 P P Battery supply voltage 13 VO3 O A LDO3 output, on-chip memory supply voltage 14 VFB I A Switcher output voltage for supplying SoC core logic 15 AGND G G Analog Ground 16 ENABLE I D Enable, active high A: Analog Pin D: Digital Pin I: Input Pin O: Output Pin I/O: Input/Output Pin P: Power Pin G: Ground Pin These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) (2) (3) (4) VBAT1, VBAT2, VBATSW -0.3 to +6.0V VO1, VO2, VO3 to GND -0.3 to +VBAT1+0.3V ENABLE, RESETN, VFB, SW, SPWI, SCLK, PWROK -0.3 to VBAT2+0.3V DGND, AGND, SWGND to GND SLUG ±0.3V Junction Temperature (TJ-MAX) 150°C Storage Temperature Range -65°C to 150°C Maximum Continuous Power Dissipation (PD-MAX)(5) 1.0 W Maximum Lead Temperature (Soldering) See(5) ESD Rating(6) Human Body Model All pins 2.0kV (1) Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under which operation of the device is ensured. Operating Ratings do not imply ensured performance limits. For ensured performance limits and associated test conditions, see the Electrical Characteristics tables. (2) All voltages are with respect to the potential at the GND pin. (3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/Distributors for availability and specifications. (4) For detailed soldering specifications and information, please refer to Application Note AN-1187 : Leadless Leadframe Package (LLP) (SNOA401). (5) The amount of Absolute Maximum power dissipation allowed for the device depends on the ambient temperature and can be calculated using the formula P = (TJ – TA)/ θJA, (1) where TJ is the junction temperature, TA is the ambient temperature, and JA is the junction-to- ambient thermal resistance. Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power dissipation exists, special care must be paid to thermal dissipation issues in board design.Internal thermal shutdown circuitry protects the device from permanent damage. Thermal shutdown engages at TJ=150°C (typ.) and disengages at TJ=140°C (typ.). (6) The Human body model is a 100 pF capacitor discharged through a 1.5 k Ω resistor into each pin. Copyright © 2005–2013, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LP5550 |
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