4

LM5134

SNVS808C – MAY 2012 – REVISED FEBRURARY 2016

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6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

NOM

MAX

UNIT

Gate drive supply, VDD

4

12.6

V

Operating junction temperature

–40

125

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

6.4 Thermal Information

LM5134

UNIT

DBV (SOT-23)

NGG (WSON)

6 PINS

6 PINS

Junction-to-ambient thermal resistance

105.9

51

°C/W

Junction-to-case (top) thermal resistance

52.1

47

°C/W

Junction-to-board thermal resistance

21

25.3

°C/W

Junction-to-top characterization parameter

1.2

0.6

°C/W

Junction-to-board characterization parameter

20.5

24.5

°C/W

Junction-to-case (bottom) thermal resistance

N/A

5.8

°C/W

(1)

Min and Max limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation

using Statistical Quality Control (SQC) methods. Limits are used to calculate Average Outgoing Quality Level (AOQL).

6.5 Electrical Characteristics

purposes only.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLY

VDD

VDD operating voltage

4

12.6

V

UVLO

VDD undervoltage lockout

VDD rising

3.6

V

3.25

4

VDD undervoltage lockout

hysteresis

0.36

V

VDD undervoltage lockout

to main output delay time

VDD rising

500

ns

VDD quiescent current

IN = INB = VDD

0.8

mA

2

OUTPUT

(SOT23-6)

Main output resistance –

pulling down

–100 mA

0.15

Ω

0.45

–100 mA

0.2

Ω

0.5

(WSON)

Main output resistance –

pulling down

–100 mA

0.2

Ω

0.5

–100 mA

0.25

Ω

0.55

Power-off pulldown

resistance

1.5

10

Ω

Power-off pulldown clamp

voltage

0.7

1

V

Peak sink current

7.6

A