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LM5134AMF/NOPB датащи(PDF) 17 Page - Texas Instruments |
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LM5134AMF/NOPB датащи(HTML) 17 Page - Texas Instruments |
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17 / 27 page ![]() 17 LM5134 www.ti.com SNVS808C – MAY 2012 – REVISED FEBRURARY 2016 Product Folder Links: LM5134 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated 8.2.2.6 Propagation Delay The acceptable propagation delay from the gate driver is dependent on the switching frequency at which it is used, and the acceptable level of pulse distortion to the system. The LM5134 device features industry best-in- class 17-ns (typical) propagation delays, which ensure very little pulse distortion and allow operation at very high frequencies. See Electrical Characteristics for the propagation and switching characteristics of the LM5134 device. 8.2.2.7 PILOT MOSFET Selection In general, a small-sized 20-V MOSFET with logic level gates can be used as the external turnoff switch. To achieve a fast switching speed and avoid the potential shoot-through, select a MOSFET with the total gate charge less than 3 nC. Verify that no shoot-through occurs for the entire operating temperature range. In addition, a small Rds(on) is preferred to obtain the strong sink current capability. The power losses of the PILOT MOSFET can be estimated in Equation 1. Pg = 1/2 × Qgo × VDD × FSW where • Qgo is the total input gate charge of the power MOSFET (1) 8.2.3 Application Curves Figure 25. OUT Turnoff to PILOT Turnon Propagation Delay vs VDD Figure 26. PILOT Turnoff to OUT Turnon Propagation Delay vs VDD 9 Power Supply Recommendations A low ESR/ESL ceramic capacitor must be connected close to the IC, between VDD and VSS pins to support the high peak current being drawn from VDD during turnon of the FETs. Place the VDD decoupling capacitor on the same side of the PC board as the driver. The inductance of via holes can impose excessive ringing on the IC pins. |
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