поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

LM5134AMF/NOPB датащи(PDF) 17 Page - Texas Instruments

Click here to check the latest version.
номер детали LM5134AMF/NOPB
подробное описание детали  Single 7.6-A Peak Current Low-Side Gate Driver
PDF  27 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  TI1 [Texas Instruments]
домашняя страница  http://www.ti.com
Logo TI1 - Texas Instruments

LM5134AMF/NOPB датащи(HTML) 17 Page - Texas Instruments

Back Button LM5134AMF/NOPB Datasheet HTML 13Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 14Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 15Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 16Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 17Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 18Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 19Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 20Page - Texas Instruments LM5134AMF/NOPB Datasheet HTML 21Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 17 / 27 page
background image
17
LM5134
www.ti.com
SNVS808C – MAY 2012 – REVISED FEBRURARY 2016
Product Folder Links: LM5134
Submit Documentation Feedback
Copyright © 2012–2016, Texas Instruments Incorporated
8.2.2.6 Propagation Delay
The acceptable propagation delay from the gate driver is dependent on the switching frequency at which it is
used, and the acceptable level of pulse distortion to the system. The LM5134 device features industry best-in-
class 17-ns (typical) propagation delays, which ensure very little pulse distortion and allow operation at very high
frequencies. See Electrical Characteristics for the propagation and switching characteristics of the LM5134
device.
8.2.2.7 PILOT MOSFET Selection
In general, a small-sized 20-V MOSFET with logic level gates can be used as the external turnoff switch. To
achieve a fast switching speed and avoid the potential shoot-through, select a MOSFET with the total gate
charge less than 3 nC. Verify that no shoot-through occurs for the entire operating temperature range. In
addition, a small Rds(on) is preferred to obtain the strong sink current capability. The power losses of the PILOT
MOSFET can be estimated in Equation 1.
Pg = 1/2 × Qgo × VDD × FSW
where
Qgo is the total input gate charge of the power MOSFET
(1)
8.2.3 Application Curves
Figure 25. OUT Turnoff to PILOT Turnon Propagation
Delay vs VDD
Figure 26. PILOT Turnoff to OUT Turnon Propagation
Delay vs VDD
9 Power Supply Recommendations
A low ESR/ESL ceramic capacitor must be connected close to the IC, between VDD and VSS pins to support the
high peak current being drawn from VDD during turnon of the FETs. Place the VDD decoupling capacitor on the
same side of the PC board as the driver. The inductance of via holes can impose excessive ringing on the IC
pins.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com