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LM5134AMF/NOPB датащи(PDF) 19 Page - Texas Instruments |
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LM5134AMF/NOPB датащи(HTML) 19 Page - Texas Instruments |
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19 / 27 page ![]() 19 LM5134 www.ti.com SNVS808C – MAY 2012 – REVISED FEBRURARY 2016 Product Folder Links: LM5134 Submit Documentation Feedback Copyright © 2012–2016, Texas Instruments Incorporated 10.3 Power Dissipation It is important to keep the power consumption of the driver below the maximum power dissipation limit of the package at the operating temperature. The total power dissipation of the LM5134 is the sum of the gate charge losses and the losses in the driver due to the internal CMOS stages used to buffer the output as well as the power losses associated with the quiescent current. The gate charge losses include the power MOSFET gate charge losses as well as the PILOT FET gate charge losses and can be calculated as follows: Pg = (Qgo + Qgp) × VDD × FSW (2) Or Pg = (Co + Cp) × VDD 2 × F SW where • Fsw is switching frequency • Qgo is the total input gate charge of the power MOSFET • Qgp is the total input gate charge of the PILOT MOSFET (3) Co and Cp are the load capacitance at OUT and PILOT outputs respectively. It should be noted that due to the use of an external turnoff switch, part of the gate charge losses are dissipated in the external turnoff switch. Therefore, the actual gate charge losses dissipated in the LM5134 is less than predicted by the above expressions. However, they are a good conservative design estimate. The power dissipation associated with the internal circuit operation of the driver can be estimated with the characterization curves of the LM5134. For a given ambient temperature, the maximum allowable power losses of the IC can be defined using Equation 4. P = (TJ – TA) / θJA where • P is the total power dissipation of the driver (4) |
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