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DMS2095LFDB датащи(PDF) 4 Page - Diodes Incorporated

номер детали DMS2095LFDB
подробное описание детали  P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMS2095LFDB датащи(HTML) 4 Page - Diodes Incorporated

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DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
4 of 7
www.diodes.com
April 2014
© Diodes Incorporated
DMS2095LFDB
MOSFET Characteristics
V , DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
DS
0.0
2.0
4.0
6.0
8.0
10.0
0
0.5
1
1.5
2
2.5
3
V= -1.0V
GS
V= -1.2V
GS
V= -1.5V
GS
V= -3.0V
GS
V= -4.5V
GS
V= -2.0V
GS
V= -4.0V
GS
V= -2.5V
GS
V , GATE-SOURCE VOLTAGE (V)
GS
Figure 2 Typical Transfer Characteristics
0
1
2
3
4
5
6
7
8
9
10
0
0.5
1
1.5
2
2.5
3
T = 150 C
A
°
T = 125 C
A
°
T = 85 C
A
°
T = 25 C
A
°
T = -55 C
A
°
V
= -5.0V
DS
I , DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
D
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
123
4
5
678
9
10
V
= -1.8V
GS
V
= -4.5V
GS
V
= -2.5V
GS
I , DRAIN SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
D
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
1
23
45
6
7
89
10
T = -55 C
A
°
T = 25 C
A
°
T = 85 C
A
°
T = 125 C
A
°
T = 150 C
A
°
V
= -4.5V
GS
T, JUNCTION TEMPERATURE ( C)
J
°
Figure 5 On-Resistance Variation with Temperature
0.4
0.8
1.2
1.6
-50
-25
0
25
50
75
100
125
150
V
= -2.5V
I = -1A
GS
D
V
= -4.5V
I = -3A
GS
D
T , JUNCTION TEMPERATURE ( C)
J
°
Figure 6 On-Resistance Variation with Temperature
0
0.02
0.04
0.06
0.08
0.1
0.12
-50
-25
0
25
50
75
100 125 150
V
= -4.5V
I=
A
GS
D
-3
V=
V
I=
A
GS
D
-2.5
-1



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