DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

2 of 7

www.diodes.com

April 2014

© Diodes Incorporated

DMS2095LFDB

Characteristic

Symbol

Value

Units

Drain-Source Voltage

-20

V

Gate-Source Voltage (Note 5)

±12

V

Steady

State

-3.4

-2.7

A

t<10s

-3.9

-3.1

A

Maximum Body Diode Forward Current (Note 7)

-1

A

Pulsed Drain Current (10μs pulse, duty cycle = 1%)

-10

A

Characteristic

Symbol

Value

Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

20

V

Average Rectified Output Current (Note 7, t<10s)

1

A

Peak Repetitive Forward Current (Note 7, t<10s)

2

A

Non-Repetitive Peak Forward Surge Current (Note 7, t<10s)

Single half sine-wave superimposed on rated load

20

A

Characteristic

Symbol

Value

Units

Total Power Dissipation (Note 6)

0.81

W

0.52

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

154

°C/W

t<10s

114

Total Power Dissipation (Note 7)

1.64

W

1.04

Thermal Resistance, Junction to Ambient (Note 7)

Steady State

77

°C/W

t<10s

57

Thermal Resistance, Junction to Case (Note 7)

27.5

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.