DMS2095LFDB

Document number: DS35955 Rev. 3 - 2

5 of 7

www.diodes.com

April 2014

© Diodes Incorporated

DMS2095LFDB

T , AMBIENT TEMPERATURE (°C)

Figure 7 Gate Threshold Variation vs. Ambient Temperature

A

0

0.2

0.4

0.6

0.8

1

-50

-25

0

25

50

75

100

125

150

-I = 1mA

D

-I = 250µA

D

V , SOURCE-DRAIN VOLTAGE (V)

Figure 8 Diode Forward Voltage vs. Current

SD

0

1

2

3

4

5

6

7

8

9

10

0

0.3

0.6

0.9

1.2

1.5

T= 85 C

A

°

T= 125 C

A

°

T= 150 C

A

°

T= -55 C

A

°

T= 25 C

A

°

V , DRAIN-SOURCE VOLTAGE (V)

Figure 9 Typical Junction Capacitance

DS

10

100

1000

10000

0

2

4

6

8

10

1214

1618

20

f = 1MHz

Q , TOTAL GATE CHARGE (nC)

Figure 10 Gate-Charge Characteristics

g

0

1

2

3

4

5

6

7

8

9

10

0

3

6

9

12

15

V

= -10V

I= -2.5A

DS

D

t1, PULSE DURATION TIMES (sec)

Figure 11 Transient Thermal Resistance

D = 0.7

D = 0.9

D = 0.5

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

Single Pulse

R

(t) = r(t) * R

R

= 155°C/W

Duty Cycle, D = t1/ t2

θθ

θ

JA

JA

JA

0.001

0.01

0.1

1

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000