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DMS2095LFDB датащи(PDF) 3 Page - Diodes Incorporated |
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DMS2095LFDB датащи(HTML) 3 Page - Diodes Incorporated |
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3 / 7 page ![]() DMS2095LFDB Document number: DS35955 Rev. 3 - 2 3 of 7 www.diodes.com April 2014 © Diodes Incorporated DMS2095LFDB Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -20 ⎯ ⎯ V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±800 nA VGS = ±12V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(th) -0.4 ⎯ -1.3 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS (ON) ⎯ ⎯ ⎯ 48 65 90 95 120 150 m Ω VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A Diode Forward Voltage VSD ⎯ -0.42 -1.2 V VGS = 0V, IS = -1.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss ⎯ 561 ⎯ pF VDS = -10V, VGS = 0V f = 1.0MHz Output Capacitance Coss ⎯ 78 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 66 ⎯ pF Gate Resistance Rg ⎯ 59.5 ⎯ Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg ⎯ 7.0 ⎯ nC VGS = -4.5V, VDS = -10V, ID = -2.5A Gate-Source Charge Qgs ⎯ 0.9 ⎯ nC Gate-Drain Charge Qgd ⎯ 1.7 ⎯ nC Turn-On Delay Time tD(on) ⎯ 5.3 ⎯ ns VDD = -10V, VGS = -4.5V, RL = 4Ω, RG = 6Ω Turn-On Rise Time tr ⎯ 5.8 ⎯ ns Turn-Off Delay Time tD(off) ⎯ 69 ⎯ ns Turn-Off Fall Time tf ⎯ 54 ⎯ ns Reverse Recovery Time trr ⎯ 12.4 ⎯ ns IF = -2.5A, di/dt = 100A/μs Reverse Recovery Charge Qrr ⎯ 3.7 ⎯ nC Electrical Characteristics – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 8) V(BR)R 20 35 ⎯ V IR = 1mA Forward Voltage (Note 8) VF ⎯ ⎯ — — 0.40 0.47 V IF = 0.5A IF = 1.0A Reverse Current (Note 8) IR ⎯ 30 80 μA VR = 20V Notes: 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing |
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