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DMS2095LFDB датащи(PDF) 3 Page - Diodes Incorporated

номер детали DMS2095LFDB
подробное описание детали  P-CHANNEL ENHANCEMENT MODE MOSFET
PDF  7 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMS2095LFDB датащи(HTML) 3 Page - Diodes Incorporated

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DMS2095LFDB
Document number: DS35955 Rev. 3 - 2
3 of 7
www.diodes.com
April 2014
© Diodes Incorporated
DMS2095LFDB
Electrical Characteristics – P-CHANNEL MOSFET – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-20
⎯
⎯
V
VGS = 0V, ID = -250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1
μA
VDS = -20V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±800
nA
VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-0.4
⎯
-1.3
V
VDS = VGS, ID = -250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
⎯
⎯
48
65
90
95
120
150
m
Ω
VGS = -4.5V, ID = -2.8A
VGS = -2.5V, ID = -2.0A
VGS = -1.8V, ID = -1.0A
Diode Forward Voltage
VSD
⎯
-0.42
-1.2
V
VGS = 0V, IS = -1.0A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
⎯
561
⎯
pF
VDS = -10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
78
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
66
⎯
pF
Gate Resistance
Rg
⎯
59.5
⎯
Ω
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
Qg
⎯
7.0
⎯
nC
VGS = -4.5V, VDS = -10V,
ID = -2.5A
Gate-Source Charge
Qgs
⎯
0.9
⎯
nC
Gate-Drain Charge
Qgd
⎯
1.7
⎯
nC
Turn-On Delay Time
tD(on)
⎯
5.3
⎯
ns
VDD = -10V, VGS = -4.5V,
RL = 4Ω, RG = 6Ω
Turn-On Rise Time
tr
⎯
5.8
⎯
ns
Turn-Off Delay Time
tD(off)
⎯
69
⎯
ns
Turn-Off Fall Time
tf
⎯
54
⎯
ns
Reverse Recovery Time
trr
⎯
12.4
⎯
ns
IF = -2.5A, di/dt = 100A/μs
Reverse Recovery Charge
Qrr
⎯
3.7
⎯
nC
Electrical Characteristics – SCHOTTKY – D1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 8)
V(BR)R
20
35
⎯
V
IR = 1mA
Forward Voltage (Note 8)
VF
⎯
⎯
—
—
0.40
0.47
V
IF = 0.5A
IF = 1.0A
Reverse Current (Note 8)
IR
⎯
30
80
μA
VR = 20V
Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing



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