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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IRF6608 датащи(PDF) 2 Page - International Rectifier |
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IRF6608 датащи(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF6608 2 www.irf.com S D G Notes:
Used double sided cooling, mounting pad. Mounted on minimum footprint full size board with metalized back and with small clip heatsink. TC measured with thermal couple mounted to top (Drain) of part. Rθ is measured at TJ of approximately 90°C. Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 29 ––– mV/°C RDS(on) Static Drain-to-Source On-Resistance ––– 7.0 9.0 m Ω ––– 8.0 11 VGS(th) Gate Threshold Voltage 1.0 ––– 3.0 V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.4 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 30 µA ––– ––– 100 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 28 ––– ––– S Qg Total Gate Charge ––– 16 24 Qgs1 Pre-Vth Gate-to-Source Charge ––– 4.6 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.4 ––– nC Qgd Gate-to-Drain Charge ––– 5.3 ––– Qgodr Gate Charge Overdrive ––– 4.7 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 6.7 ––– Qoss Output Charge ––– 11 ––– nC td(on) Turn-On Delay Time ––– 13 ––– tr Rise Time ––– 12 ––– td(off) Turn-Off Delay Time ––– 16 ––– ns tf Fall Time ––– 3.4 ––– Ciss Input Capacitance ––– 2120 ––– Coss Output Capacitance ––– 440 ––– pF Crss Reverse Transfer Capacitance ––– 260 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current c A EAR Repetitive Avalanche Energy c mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 13 (Body Diode) A ISM Pulsed Source Current ––– ––– 100 (Body Diode) c VSD Diode Forward Voltage ––– 0.94 1.2 V trr Reverse Recovery Time ––– 31 47 ns Qrr Reverse Recovery Charge ––– 33 50 nC ––– VGS = 4.5V Typ. ––– ––– ID = 8.8A VGS = 0V VDS = 15V ID = 8.8A 54 TJ = 25°C, IF = 8.8A di/dt = 100A/µs e TJ = 25°C, IS = 8.8A, VGS = 0V e showing the integral reverse p-n junction diode. 8.8 Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 13A e Max. VGS = 4.5V, ID = 10A e VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V MOSFET symbol Clamped Inductive Load VDS = 15V, ID = 8.8A Conditions 0.21 ƒ = 1.0MHz VDS = 15V, VGS = 0V VDD = 15V, VGS = 4.5V e VDS = 24V, VGS = 0V, TJ = 125°C VDS = 15V VGS = 12V VGS = -12V Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.38mH RG = 25Ω, IAS = 8.8A. Pulse width ≤ 400µs; duty cycle ≤ 2%. Surface mounted on 1 in. square Cu board. |
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