IRF6608

4

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Fig 10. Threshold Voltage vs. Temperature

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

0.2

0.4

0.6

0.8

1.0

1.2

VSD, Source-toDrain Voltage (V)

0.1

1.0

10.0

100.0

TJ = 25°C

TJ = 150°C

VGS = 0V

0

1

10

100

1000

VDS , Drain-toSource Voltage (V)

0.1

1

10

100

1000

Tc = 25°C

Tj = 150°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

-75

-50

-25

0

25

50

75

100

125

150

TJ , Temperature ( °C )

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

ID = 250µA

25

50

75

100

125

150

TJ , Junction Temperature (°C)

0

10

20

30

40

50

60

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

10

100

t1 , Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

100

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthja + Tc

τ

J

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci

i

/Ri

Ci=

τi/Ri

τ

τ

C

τ

4

τ

4

R

4

R

4

Ri (°C/W)

τi (sec)

2.023

0.000678

19.48

0.240237

21.78

2.0167

14.71

58