IRF6608 datasheet(3/8 Pages) IRF

номер детали	IRF6608

подробное описание детали	lHEXFET Power MOSFET

PDF	8 Pages

Scroll/Zoom	100%

производитель	IRF [International Rectifier]

домашняя страница	http://www.irf.com

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IRF6608

www.irf.com

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance vs. Temperature

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

-60 -40 -20

80 100 120 140 160

TJ , Junction Temperature (°C)

0.5

1.0

1.5

2.0

ID = 12A

VGS = 10V

0.1

1.0

10.0

100.0

100

30µs PULSE WIDTH

Tj = 25°C

2.7V

VGS

TOP

10V

7.0V

4.5V

3.8V

3.5V

3.2V

2.9V

BOTTOM

2.7V

0.1

1.0

10.0

100.0

100

30µs PULSE WIDTH

Tj = 150°C

2.7V

VGS

TOP

10V

7.0V

4.5V

3.8V

3.5V

3.2V

2.9V

BOTTOM

2.7V

2.5

2.8

3.0

3.3

3.5

VGS, Gate-to-Source Voltage (V)

1.0

10.0

100.0

VDS = 20V

30µs PULSE WIDTH

TJ = 25°C

TJ = 150°C

100

VDS, Drain-to-Source Voltage (V)

100

1000

10000

Coss

Crss

Ciss

VGS = 0V,

f = 1 MHZ

Ciss = C gs + Cgd, C ds SHORTED

Crss = Cgd

Coss = Cds + Cgd

010

QG Total Gate Charge (nC)

VDS= 24V

VDS= 15V

ID= 8.8A

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