www.irf.com

1

3/31/04

IRF6608

Notes

 through ˆ are on page 2

DirectFET

™ ISOMETRIC

ST

Applicable DirectFET Outline and Substrate Outline (see p.7, 8 for details)

SQ

SX

ST

MQ

MX

MT

Description

achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase,

infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and

processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous

best thermal resistance by 80%.

The IRF6608 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and

switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest

generation of processors operating at higher frequencies. The IRF6608 has been optimized for parameters that are critical in

synchronous buck converters including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6608 has been

optimized for parameters that are critical in synchronous buck converters including Rds(on) and gate charge to minimize losses in

the control FET socket.

Qg

30V

9.0m

Ω@V

16nC

11m

Ω@V

Absolute Maximum Ratings

Parameter

Units

Drain-to-Source Voltage

V

Gate-to-Source Voltage

A

Pulsed Drain Current

c

Power Dissipation

g

Power Dissipation

g

W

Power Dissipation

Linear Derating Factor

W/°C

Operating Junction and

°C

Storage Temperature Range

Thermal Resistance

Parameter

Typ.

Max.

Units

Junction-to-Ambient

fj

–––

58

Junction-to-Ambient

gj

12.5

–––

Junction-to-Ambient

hj

20

–––

°C/W

Junction-to-Case

ij

–––

3.0

Junction-to-PCB Mounted

1.0

–––

Max.

13

10

100

±12

30

55

-40 to + 150

2.1

0.017

1.4

42

PD - 94727B